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本文提出了一种通过电学瞬态温度响应测量检测半导体器件芯片级温度均匀性的方法。实验证明器件的芯片级热不均匀性与加热响应曲线第一级台阶的高度呈现单调关系。在基于有限元方法的三维瞬态温度模拟及基于电学温敏参数法的测量结果中均可观测到这一现象。我们同样利用红外热成像法测量了器件在不同电流分布下的温度分布情况，利用热谱法定量分析了对应的芯片级温度不均匀性，其结果与本文所提出的方法的分析结果相吻合。“,”In this paper, a method to evaluate the chip-level thermal uniformity of semiconductor devices by electrical transient thermal response testing is proposed. It’s found that the degree of the chip’s thermal non-uniformity presents a monotonic increasing relationship with the height of the first step of heating response curves. This phenomenon is observed both in a 3-dimensional transient thermal simulation based on the finite element method (FEM) and transient thermal measurements by electrical temperature sensitive parameter (TSP) method. Chip’s surface temperature distributions under different current distributions are also measured by infrared image method and the thermal spectrum method is adopted to analyze the temperature non-uniformity quantitatively. The relationship between the degree of temperature non-uniformity and current distribution is consistent with the result of our proposed method.