俄歇电子谱(AES)是进行薄膜和表面薄层化学成份微观分析的主要手段之一。提出了一种对离子注入样品进行深度剖面分析时的深度定标方法——离子注入深度定标法。用此方法计算的离子注入投影射程与 LSS 理论值一致。考虑了注入层中注入元素浓度梯度的存在,提出了修正浓度梯度和基体效应的方法,改善了深度剖面定量分析的精度。 Auger Electron Spectroscopy (AES) is one of the primary tools for microscopic analysis of thin-film and thin-layer chemical compositions. A depth calibration method for depth profile analysis of ion implanted samples is proposed, which is the ion implantation depth calibration method. The projection distance of ion implantation calculated by this method is consistent with the theoretical value of LSS. Considering the existence of elemental concentration gradient in the injection layer, a method to correct the concentration gradient and the matrix effect is proposed, which improves the accuracy of the quantitative analysis of the depth profile.