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高反压、大电流电力电子器件的发展要求区熔硅单晶直径进一步增大.大直径区熔硅单晶的拉制最大困难在于高频加热设备能力和成晶工艺条件.目前国内生产φ101mm.区熔硅单晶只有一个厂家能在进口设备上实现.我们通过设备技术改造和工艺条件摸索,成功实现了在国产设备上拉制φ101mm.区熔硅单晶.填补了空白,节约了外汇,打破了迷信,为国内硅材料生产厂家和国产设备制造厂树立了信心.
The development of high backpressure and high current power electronic devices requires that the diameter of the zone fused silicon single crystal further increases.The biggest difficulty of drawing the large diameter zone of fused silicon single crystal lies in the capability of high frequency heating equipment and the process conditions of the crystallization.At present domestic production φ101mm Only one manufacturer of zone melting silicon single crystal can be realized on the imported equipment.We have succeeded in drawing φ101mm zone melting silicon single crystal on the domestic equipment through equipment technological transformation and process condition exploration, filling the gap and saving foreign exchange , Breaking the superstition for the domestic silicon material manufacturers and domestic equipment manufacturers set a confidence.