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本工作用化学气相淀积方法在A lN/S i(100)复合衬底上生长S iC薄膜。外延生长过程中,采用C4H4和S iH4作为反应气源,H2作为载气。样品的X-射线衍射谱和拉曼散射谱显示,所得到的外延层为六角对称的S iC薄膜。俄歇电子能谱及X-射线光电子能谱的测量结果表明,在外延膜中存在来自衬底的A l和N元素。样品的光致发光测量显示,所有的样品均可在室温下观察到位于3.03 eV和3.17 eV处的发光峰,这分别相应于4H-S iC能带中电子从导带到A l受主能级之间的辐射跃迁和电子从N施主能级到价带之间的辐射跃迁,从而表明所得的外延薄膜的多形体为4H-S iC。
This work uses a chemical vapor deposition method to grow a SiC thin film on a AlN / Si (100) composite substrate. During epitaxial growth, C4H4 and SiH4 are used as the source of the reaction gas and H2 as the carrier gas. X-ray diffraction and Raman scattering spectra of the samples show that the epitaxial layer obtained is a hexagonal symmetrical SiC film. Auger electron spectroscopy and X-ray photoelectron spectroscopy measurements showed that Al and N elements from the substrate were present in the epitaxial film. Photoluminescence measurements of the samples showed that luminescence peaks at 3.03 eV and 3.17 eV were observed for all samples at room temperature, corresponding to the electron from the conduction band to the Al acceptor energy in the 4H-SiC band, respectively Level and the transition of the electron from the N donor level to the valence band, indicating that the resulting polymorph of the epitaxial film is 4H-SiC.