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A novel high-order curvature compensation negative voltage bandgap reference(NBGR) based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation(ECC)term with many high order terms in itself, in a lower temperature range(TR) and a multilevel curvature compensation(MLCC) term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165 ℃(–40 to 125 ℃) is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS.The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation(CSMC) 0.5 μm BCD technology demonstrates an accurate voltage of –1.183 V with a temperature coefficient(TC) as low as 2.45 ppm/?C over the TR of 165 ℃ at a –5.0 V power supply; the line regulation is 3 mV/V from a –5 to –2 V supply voltage.The active area of the presented NBGR is 370×180 μm~2.
A novel high-order curvature compensation negative voltage bandgap reference (NBGR) based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation (ECC) term with many high order terms in itself, in a lower temperature range (TR) and A multilevel curvature compensation (MLCC) term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165 ° C (-40 to 125 ° C) is realized. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation (CSMC) 0.5 μm BCD technology demonstrates an accurate voltage of -1.183 V with a temperature coefficient (TC) as low as 2.45 ppm / ° C over the TR of 165 ° C at a -5.0 V power supply; the line regulation is 3 mV / V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370 × 180 μm ~ 2.