论文部分内容阅读
本文研究以Fe-Mo/MgO作为催化剂,甲烷、硼烷、乙二胺为反应源气体,采用偏压辅助热丝化学气相沉积(HFCVD)方法直接合成了三元硼碳氮化合物单壁纳米管(BCN-SWNTs)。合成的BCN-SWNTs的结构类似于单壁碳纳米管,B和N原子取代了部分C原子的位置,从而3种原子形成了三元共价化合物纳米管,其中N含量在3—8atom%之间,B含量在2—4atom%之间。并通过透射电镜能量过滤元素成像等手段,证明B、C、N三种元素均匀地分布在单壁纳米管中。不同于碳纳米管由于复杂的手性问题导致的性质不可控性,硼碳氮纳米管的电子结构主要依赖于它的化学组分,与其几何手性无关,而且预测其能隙可以在石墨和氮化硼(0.0—5.5eV)之间调节。这些特有的性质为实现纳米管在电子和光电子等领域的应用开辟了新的途径,有望实现从性质不可控的碳纳米管电子器件到性质基本可控的硼碳氮纳米管电子器件的突破。
In this paper, three-element boron-carbonitride single-walled nanotubes (CNTs) were synthesized by the method of bias assisted hot filament chemical vapor deposition (HFCVD) using Fe-Mo / MgO as catalyst, (BCN-SWNTs). The structure of the synthesized BCN-SWNTs is similar to that of single-walled carbon nanotubes, where the B and N atoms replace part of the C atoms, so that the three atoms form ternary covalent compound nanotubes with N content between 3 and 8 atom% Between, B content of 2-4atom%. And through the transmission electron microscopy of energy-filtered element imaging and other means to prove B, C, N three elements evenly distributed in single-walled nanotubes. Different from the uncontrollable nature of carbon nanotubes due to complex chiral problems, the electronic structure of boron carbonitride nanotubes depends mainly on its chemical composition, regardless of its geometrical chirality, and its energy gap is predicted to vary between graphite and Boron nitride (0.0-5.5 eV). These unique properties open up new avenues for the application of nanotubes in the fields of electronics and optoelectronics, and are expected to make breakthroughs in electronic devices with uncontrollable carbon nanotubes and those with substantially controlled properties.