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采用共沉积技术制备了AgTCNQ薄膜,并进行了红外、紫外光谱表征.利用微电子工艺制备了基于AgTCNQ薄膜的有机双稳态器件.研究发现,Ti/AgTCNQ/Au双稳态器件具有可逆、可重复的开关存储特性.将器件从初始的高阻态转变为低阻态的正向开关阈值电压为3.8～5V,将低阻态转变为高阻态的负向阈值电压仅为-3.5～-4.4V,与通常的CuTCNQ器件相比较小.这种基于AgTCNQ交叉结构的有机双稳态器件可应用于非易失性有机存储器.
The AgTCNQ thin films were prepared by co-deposition technique and characterized by IR and UV spectroscopy. The AgTnQ thin film-based organic bistable devices were fabricated by microelectronics process. It was found that Ti / AgTCNQ / Au bistable devices are reversible, Repeated switch storage characteristics The threshold voltage of the forward switch that changes the device from the initial high-impedance state to the low-impedance state is 3.8-5V, the negative threshold voltage that turns the low-resistance state to the high-impedance state is only -3.5 ~ 4.4V, which is smaller than the conventional CuTCNQ devices.This AgTnQ cross structure-based organic bistable device can be applied to non-volatile organic memory.