Carbothermal synthesis of Si3N4 powders using a combustion synthesis precursor

来源 :International Journal of Minerals Metallurgy and Materials | 被引量 : 0次 | 上传用户:zsk1370826
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Si3N4 powders were synthesized by a carbothermal reduction method using a SiO2 + C combustion synthesis precur- sor derived from a mixed solution consisting of silicic acid (Si source), polyacrylamide (additive), nitric acid (oxidizer), urea (fuel), and glucose (C source). Scanning electron microscopy (SEM) micrographs showed that the obtained precursor exhibited a uniform mixture of SiO2 + C composed of porous blocky particles up to ~20 μm. The precursor was subsequently calcined under nitrogen at 1200-1550°C for 2 h. X-ray diffraction (XRD) analysis revealed that the initial reduction reaction started at about 1300°C, and the complete transition of SiO2 into Si3N4 was found at 1550°C. The Si3N4 powders, synthesized at 1550°C, exhibit a mixture phase of α- and β-Si3N4 and consist of mainly agglomerates of fine particles of 100-300 nm, needle-like crystals and whiskers with a diameter of about 100 nm and a length up to several micrometers, and a minor amount of irregular-shaped growths. Si3N4 powders were synthesized by a carbothermal reduction method using a SiO2 + C combustion synthesis precur- sor derived from a mixed solution consisting of silicic acid (Si source), polyacrylamide (additive), nitric acid (oxidizer), urea (fuel), and glucose (C source). Scanning electron microscopy (SEM) micrographs showed that the precursor was obtained as a uniform mixture of SiO2 + C composed of porous blocky particles up to ~ 20 μm. The precursor was calcined under nitrogen at 1200-1550 ° C for 2 h. X-ray diffraction (XRD) analysis revealed that the initial reduction reaction started at about 1300 ° C, and the complete transition of SiO2 into Si3N4 was found at 1550 ° C. The Si3N4 powders, synthesized at 1550 ° C, exhibit a mixture phase of α- and β-Si3N4 and consist of mainly agglomerates of fine particles of 100-300 nm, needle-like crystals and whiskers with a diameter of about 100 nm and a length up to several micrometers, and a minor amount of irregular-shape d growths.
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