Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode

来源 :半导体学报:英文版 | 被引量 : 0次 | 上传用户：sdszsh122

【摘要】

：

The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitrid

【作者】

：

A.Menani L.Dehimi S.Dehimi F.P

【机构】

：

LaboratoryofMetallicandSemiconductingMaterials（LMSM）,FacultyofScience,ResearchCentreinIndustrialTech

【出处】

：

半导体学报:英文版

【发表日期】

：

2020年6期

【关键词】

：

laser diode quantum well optical gain threshold current temperature

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The effects of the quantum well(QW)width,carrier density,and aluminium(Al)concentration in the barrier layers on the optical characteristics of a gallium nitride(GaN)-based QW laser diode are investigated by means of a careful modelling analysis in a wide

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Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode

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