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GaN nanobelts are synthesized using the chemical vapor deposition method with the catalyst of Ni.The microstructure,composition and photoluminescence property are characterized by x-ray diffraction,field emission scanning electron microscopy,high-resolution transmission electron microscopy and photoluminescence spectra.The results demonstrate that the single crystalline GaN nanobelts are grown with a hexagonal wurtzite structure,in width ranging from 500 nm to 2μm and length up to 10-20μm.Moreover,a large piezoelectric coefficient d_(33)of 20pm/V is obtained from GaN nanobelts by an atomic force microscopy and the high piezoelectric property implies that the perfect single crystallinity and the freedom of dislocation for the GaN nanobelt have significant impact on the electromechanical response.
GaN nanobelts are synthesized using the chemical vapor deposition method with the catalyst of Ni. Microstructure, composition and photoluminescence property are characterized by x-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectra. that the single crystalline GaN nanobelts are grown with a hexagonal wurtzite structure, in a wide ranging from 500 nm to 2 μm and length up to 10-20 μm. Moreover, a large piezoelectric coefficient d_ (33) of 20 pm / V is obtained from GaN nanobelts by an atomic force microscopy and the high piezoelectric property implies that the perfect single crystallinity and the freedom of dislocation for the GaN nanobelt have significant impact on the electromechanical response.