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对扩展电阻温度 (SRT)传感器的阻温特性 (R -T)进行了研究。实验结果表明 ,器件的结构尺寸、衬底的掺杂浓度大大地影响着器件的最高工作温度 (Tmax) ,而工艺条件的影响很小。适当小的n+ 圆形半径和适当高的衬底掺杂可使SRT传感器的正温度系数 (PTC)工作区在 2mA的正向偏置电流下拓宽至 4 0 0℃以上
The resistance temperature characteristic (R-T) of the extended resistance temperature (SRT) sensor was studied. The experimental results show that the structure size of the device, the substrate doping concentration greatly affects the device maximum operating temperature (Tmax), and the impact of process conditions is small. A suitably small n + circle radius and suitably high substrate doping allow the positive temperature coefficient (PTC) work area of the SRT sensor to be broadened to over 400C at a forward bias current of 2mA