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通过化学气相沉积法在不同衬底上制备了大量的氧化硅纳米线 .选用衬底为Si片、带有约 10 0nm厚SiO2 氧化层Si片和石英片 .利用场发射扫描电子显微镜 (SEM)和透射电镜 (TEM ,配备有能谱仪 )对样品的表面形貌、结构和成分进行研究 .结果表明 :这些纳米线都为非晶态 ,但在不同衬底上生长的纳米线形貌、尺寸和化学成分不同 .讨论了各种衬底对不同特征氧化硅纳米线生长的影响 .
A large number of silicon oxide nanowires were prepared on different substrates by chemical vapor deposition method.The Si substrate was selected as the substrate, and Si wafer and quartz wafer with SiO2 layer of about 100 nm were deposited.Secondly, by using field emission scanning electron microscope (SEM) (TEM, equipped with an energy dispersive spectrometer) were used to investigate the surface morphology, structure and composition of the samples.The results show that these nanowires are amorphous, but the morphology of nanowires grown on different substrates, Different sizes and chemical compositions, the effects of various substrates on the growth of different characterized silicon oxide nanowires are discussed.