“氧化铅”电视摄象管与普通的光电导摄象管之间的特性差别就在于:前者有带着整流(或封闭)接触的光导涂层。正是由于这些接触,氧化铅管才有极低的暗电流。在电子枪一侧的接触是对光电导层的恰当的一面掺以杂质,使其成为 P-型半导体。另一接触是用浓 N-型 SnO_2的信号板或者所连接的下一层膜形成的,如果它与 SnO_2接触能变成 N-型。在过去的文章中介绍,在施体密度和载流子迁移率的大范围内,光导材料的能级 The difference between the “lead oxide” TV cameras and the normal photoconductive cameras is that the former has a photoconductive coating with a rectified (or closed) contact. It is because of these contacts, lead oxide tube has very low dark current. Contact on the electron gun side incorporates impurities into the proper side of the photoconductive layer, making it a P-type semiconductor. The other contact is formed with a signal plate of concentrated N-type SnO 2 or the next layer of film attached, which can become N-type if it is in contact with SnO 2. In the past articles, it was introduced that in the wide range of donor density and carrier mobility, the energy level of the photoconductive material