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给出了光表面控制负阻晶体管 PNEGIT( Photo- Controlled Surface Negative ImpedanceTransistor)的电路模型 ,从栅控晶体管数学模型出发并结合光电池的电路模型 ,用电路模型描写带有表面复合和体复合的器件 ,模型为研究 PNEGIT和表面控制负阻晶体管 NEGIT( Surface- Controlled Negative Impedance Transistor)以及探讨该类器件的新用途提供了一种手段 ,把模拟结果与实验进行了对比
The circuit model of Photo-Controlled Surface Negative Impedance Transistor is presented. Based on the mathematical model of Gated Transistor and the circuit model of photovoltaic cell, the circuit model is used to describe the device with surface recombination and body recombination. The model provides a means to study PNEGIT and the surface-controlled Negative Impedance Transistor (NEGIT) and to explore new applications of these devices. The simulation results are compared with the experimental results