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Trigger characteristics of electrostatic discharge (ESD) protecting devices operating under various ambient tempera-tures ranging from 30 ℃ to 195 ℃ are investigated.The studied ESD protecting devices are the H-gate NMOS transistors fabricated with a 0.18-μm partially depleted silicon-on-insulator (PDSOI) technology.The measurements are conducted by using a transmission line pulse (TLP) test system.The different temperature-dependent trigger characteristics of grounded-gate (GGNMOS) mode and the gate-triggered (GTNMOS) mode are analyzed in detail.The underlying physical mecha-nisms related to the effect of temperature on the first breakdown voltage VT1 are investigated through the assist of technology computer-aided design (TCAD) simulation.