论文部分内容阅读
第三代(3G)无线基站、自动测试与测量以及便携式计算设备等先进应用系统都需要高性能的模拟组件。各家公司都在利用先进的工艺技术以满足这种需求,比如最新推出的第三代完全介质隔离互补双极工艺BiCom3。 BiCom3是一种硅-锗(SiGe)工艺,是为极高速精密模拟集成电路开发的。这是以硅(Si)为基底,然后再添加锗(Ge)的一种工艺。用锗来掺杂基底大大提高了
Advanced applications such as third generation (3G) wireless base stations, automated test and measurement, and portable computing devices require high-performance analog components. Companies are using advanced process technologies to meet this need, such as the recently introduced BiCom3, the third generation fully dielectric-isolated complementary bipolar process. BiCom3 is a silicon-germanium (SiGe) process developed for very high-speed precision analog integrated circuits. This is a silicon (Si) -based, and then add germanium (Ge) a process. Substrates doped with germanium have greatly increased