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量子阱红外探测器由于具有更高的材料均匀性和成品率,是红外探测技术研究的重点方向之一。本文通过突破材料外延、器件制备工艺、读出电路设计以及倒装互连等关键工艺技术,研制了长波640×512元GaAs/A lGaAs量子阱红外焦平面探测器。77 K下,器件的平均黑体响应率Rv为1.4×107V/W,峰值探测率Dλ*为6.2×109cm Hz1/2W-1,器件的盲元率达到了0.87%,响应率不均匀性5.8%,并在77 K下对探测器进行成像演示。
Quantum well infrared detector due to the higher uniformity of materials and yield, infrared detection technology is one of the key directions. In this paper, a long wave 640 × 512 GaAs / AlGaAs quantum well infrared focal plane detector was developed by breaking through the key technologies such as material epitaxy, device preparation technology, readout circuit design and flip-chip interconnection. At 77 K, the device’s average blackbody response rate Rv was 1.4 × 107V / W and the peak detection rate Dλ * was 6.2 × 109cm Hz1 / 2W-1. The device’s blind element rate reached 0.87% and the response rate nonuniformity was 5.8% , And the detector imaging demonstration at 77K.