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对压敏器件用低阻NTD CZ Si(直拉硅)的深辐照工艺进行了研究,主要包括三个方面内容:(1)配合自然单晶生长工艺的改进,对CZ与FZ单晶痕量重金属杂质进行中子活化分析。(2)在同样深辐照条件下对CZ与FZ单晶的β-低本底剩余放射性进行跟踪测量,所得到的放射性强度衰减曲线表明CZ与FZ是一致的,同样可以采用NTD技术。(3)低阻CZ硅单晶中子嬗变掺杂工艺研究,根据目标电阻率,适当地选择电子移率μ_c值,通过实验与校正,得到合理的掺杂系数K值。保证掺杂精度,使晶体掺杂的命中率获得显著提高,与常规掺杂相比由原来的40％提高到90％左右。径向不均匀性Δρ≤5％,径向微区不均匀性Δρ≤3～5％。首批量低阻CZ NTD硅的研制及其压敏器件生产中的应用,获得良好的效果,压敏器件性能达到规定标准,并明显地优于普通CZ硅材料的产品,成品率和优品率由40％提高到60％。
The deep-irradiation process of low-resistance NTD CZ Si (CzSi) was studied in pressure-sensitive devices, which mainly includes three aspects: (1) With the improvement of natural single crystal growth process, Heavy metal impurities for neutron activation analysis. (2) Under the same deep irradiation conditions, the residual radioactivity of β-low background in CZ and FZ single crystal was measured. The obtained attenuation curves of radioactivity showed that CZ and FZ were consistent, and NTD technology could also be used. (3) Study on the transmutation and doping technology of low resistance CZ silicon single crystal neutron, according to the target resistivity, select the appropriate electron mobility μ_c value, through experiments and calibration, get reasonable doping coefficient K value. Ensure doping accuracy, the crystal doping hit rate was significantly improved, compared with the conventional doping from the original 40% to 90%. Radial non-uniformities Δρ≤5%, radial micro-zone non-uniformities Δρ≤3 ~ 5%. The first batch of low-resistance CZ NTD silicon and its pressure-sensitive device manufacturing applications, get good results, pressure-sensitive devices to achieve the required performance standards, and significantly better than the average CZ silicon material products, yield and rate of excellence From 40% to 60%.