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衬底型离子敏感场效应晶体管是一种化学敏感器件,它不同于普通的离子敏感场效应晶体管。这种器件的敏感膜是沉积在衬底的背面。敏感膜的活性区与测试溶液接触,引起漏源电流变化。本文从理论上推导出了衬底型器件漏源电流的计算式。
The substrate type ion sensitive field effect transistor is a kind of chemical sensitive device, it is different from ordinary ion sensitive field effect transistor. The sensitive film of this device is deposited on the back of the substrate. The active membrane of the sensitive membrane comes in contact with the test solution, causing a change in the drain-source current. This paper deduces theoretically the calculation formula of drain-source current of substrate type device.