There is a great interest in monolithic 4H-Si C Junction Barrier Schottky(JBS) diodes with the capability of a high forward current for industrial power applications.In this paper,we report large-area monolithic 4H-Si C JBS diodes fabricated on a 10 μm 4H-Si C epitaxial layer doped to 6×1015 cm3.JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V,which corresponds to a current density of 1100 A/cm2.A near ideal breakdown voltage of 1.6 k V was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings(MFGR) termination,which is about 87.2% of the theoretical value.The differential specific-on resistance(RSP-ON) was measured to be 3.3 m cm2,leading to a FOM(VB2/RSP-ON) value of 0.78 GW/cm2,which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-Si C unipolar devices. There is a great interest in monolithic 4H-Si C Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-Si C JBS diodes fabricated on a 10 μm 4H-Si C epitaxial layer doped to 6 × 10 15 cm 3. JBS diodes with an active area of ​​30 mm 2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A / cm2.A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings (MFGR) termination, which is about 87.2% of the theoretical value. The differential specific-on resistance (RSP-ON) was measured to be 3.3 m cm2, leading to a FOM (VB2 / RSP-ON) value of 0.78 GW / cm2, which is very close to the theoretical limit of the tradeoff between the specific -on resistance and breakdown voltage for 4H-Si C unipolar devices.