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以磁共振压力显微和半导体核子自旋态研究为目的,采用电子束和等离子体刻印方法制备硅振荡器,脉冲调制序列控制磁共振条件频率和旋转框架翻转,依据样品的自旋-晶格弛豫时间和自旋-自旋弛豫时间,获得了共振显微压力,测试了压力显微的灵敏度。结果表明,光刻的探头具有高Q值和软悬臂低倔强系数K,磁共振压力通过扫描片段和激光光纤干涉得到了极其微小的压力。光刻探头的共振压力显微具有高空间分辨率,兼具核磁共振成像(MRI)和原子压力显微技术(AFM)优点,是一种重要的核自旋探测技术和三维原子分辨率成像的有力方法。
Aiming at the study of magnetic resonance pressure microscopy and semiconductor nuclear spin state, silicon oscillators were fabricated by electron beam and plasma etching. The pulse modulation sequence controlled the frequency of the magnetic resonance and the rotation frame rotation. Based on the spin-lattice Relaxation time and spin-spin relaxation time, the resonance micro-pressure was obtained, and the sensitivity of the micro-pressure was tested. The results show that the photolithographic probe has a high Q value and a low cantilever stubbornness coefficient K, and the magnetic resonance pressure results in extremely small pressure by scanning the segment and laser fiber interference. Resonant pressure microscopy of photolithographic probes with high spatial resolution, both magnetic resonance imaging (MRI) and atomic pressure microscopy (AFM), is an important nuclear spin detection technique and three-dimensional atomic resolution imaging Powerful method.