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对用微波等离子体化学汽相沉积法沉积在Ｓｉ基片上的ＣＮｘ膜分别进行Ｒａｍａｎ散射、Ｘ射线光电子能谱、Ｘ射线衍射和扫描电子显微镜等技术的分析与测试．Ｒａｍａｎ散射的研究结果表明在ＣＨ４与Ｎ２的流量比低于１∶８时，ＣＮｘ膜的散射谱中以非晶石墨峰的形式出现．当流量比为１∶８时，则表现为较尖锐的Ｃ≡Ｎ键（２１９０ｃｍ－１）的特征峰；从Ｘ射线光电子能谱的分析结果可以看出Ｃ，Ｎ成键的方式主要是Ｃ≡Ｎ键和Ｃ—Ｎ键，但Ｘ射线衍射谱中并没有对应于βＣ３Ｎ４相的衍射峰出现；气压对膜的沉积速率有影响．
The CNx films deposited on the Si substrate by microwave plasma chemical vapor deposition method were analyzed and tested by Raman scattering, X-ray photoelectron spectroscopy, X-ray diffraction and scanning electron microscopy, respectively. The results of Raman scattering show that the scattering spectra of CNx films appear as amorphous graphite peaks when the flow ratio of CH4 to N2 is lower than 1: 8. When the flow ratio is 1: 8, the characteristic peak of sharp C≡N bond (2190 cm-1) appears. From the analysis results of X-ray photoelectron spectroscopy, it can be seen that the bonding modes of C and N are mainly C ≡ N bond and C-N bond, but X-ray diffraction spectrum did not correspond to the β-C3N4 diffraction peaks appear; pressure on the deposition rate of the film.