采用多种波段内激光辐照带有电容反馈互导放大器(CTIA)读出电路的PV型线阵HgCdTe探测器,实验均发现,当激光功率密度增强到约10-2 W/cm2时,未辐照像素也存在响应,且其基底信号出现以前未曾发现的反常响应,即随功率密度的增加,未辐照像素基底信号的响应值先下降后上升,并且噪声增大。针对这一反常响应现象进行了深入研究,结果表明器件内部公共P级结构、电路共用Vref电压结构是导致这一反常响应的主要原因。 The use of a variety of wavelength band laser radiation with capacitive feedback transconductance amplifier (CTIA) readout circuit PV linear HgCdTe detector array experiments were found that when the laser power density increased to about 10-2 W / cm2, not Irradiation pixels also respond, and their base signals appear anomalous response not previously found. That is, as the power density increases, the response of the unirradiated pixel base signal first decreases and then increases, and the noise increases. The phenomenon of this anomalous response has been studied in depth. The results show that the common P-level structure and the common Vref voltage structure in the device are the main causes of this abnormal response.