利用ISE软件的水动力学模型对不同材料结构的AlAs/GaAs/InGaAs双势垒共振隧穿二极管(DBRTD)的直流特性进行了模拟。当势垒厚度、势垒高度、子阱厚度、间隔层厚度、掺杂浓度改变时,可以观察到DBRTD直流特性也随之改变。采用薄的子阱厚度、高的掺杂浓度以及恰当的间隔层厚度、势垒厚度和高度,可以提高RTD器件的峰谷电流比(PVCR)和峰电流密度,从而满足实际应用的需要。 The DC characteristics of AlAs / GaAs / InGaAs double-barrier resonant tunneling diodes (DBRTD) with different material structures were simulated by the hydrodynamic model of ISE software. When the barrier thickness, the barrier height, the thickness of the sub-well, the thickness of the spacer layer and the doping concentration are changed, it can be observed that the DC characteristic of the DBRTD also changes. With thin sub-well thickness, high doping concentration and appropriate spacer layer thickness, barrier thickness and height, the peak-to-valley current ratio (PVCR) and peak current density of RTD devices can be increased to meet the practical application needs.