相较于以往使用的硅晶体管,氮化镓(GaN)可以让全新的电源应用在同等的电压下以更高的转换频率运行。这意味着,在同样的条件下,GaN可实现比基于硅材料的解决方案更高的效率。TI日前发布了LMG5200,随着这款全集成式原型机的推出,工程师们能够轻松地将GaN技术融入到电源解决方案中,从而进一步突破了对常规功率密度 Compared to the silicon transistors used in the past, gallium nitride (GaN) allows the new power applications at the same voltage to run at a higher conversion frequency. This means that under the same conditions, GaN can achieve higher efficiencies than silicon-based solutions. TI unveiled the LMG5200, and with the introduction of this fully integrated prototype, engineers can easily incorporate GaN technology into power solutions to further break the conventional power density