论文部分内容阅读
§5.1 再谈DRO的温度稳定度前面已叙述过采用温度性能良好且温度系数可控的介质谐振器稳频法可实现结构紧凑、性能优良的TDRO。归结第四讲所讨论的各种DRO可知,它们均是由一无源电路(包含装于微带线的DR)和一产生振荡的有源器件(晶体管)所构成。因此要实现温度稳定度高的DRO,并不是简单地选用温度系数为零的介质谐振器,而是在满足振荡条件时,使主要由DR决定的无源电路温度系数补偿有源器件的温度系数。第四讲在讨论各种无源与有源稳频DRO时均导出表明这种温度补偿关系的振荡器温度系数公式。以4.2节中串联反馈型DRO为例,相应公式为:
§5.1 talk about the temperature stability of the DRO You have previously described the use of temperature and temperature coefficient of controllable dielectric resonator frequency stabilization method can achieve compact, high performance TDRO. As can be seen from the various DROs discussed in Chapter 4, they are made up of a passive circuit (including a DR mounted on a microstrip line) and an oscillating active device (transistor). Therefore, to achieve high temperature stability of the DRO, is not simply the use of dielectric zero temperature coefficient of the resonator, but to meet the oscillation conditions, the main decision by the DR passive circuit temperature coefficient of compensation active device temperature coefficient . Lecture 4 In the discussion of various passive and active frequency stabilization DRO are derived to show that the relationship between the temperature compensation oscillator temperature coefficient formula. Using the DRO in series in Section 4.2 as an example, the corresponding formula is: