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Bi2Te3薄膜是室温下热电性能最好的热电材料,利用磁控溅射在长有一薄层SiO2的n型硅样品上制备Bi/Te多层复合薄膜,经后续退火处理生成Bi2Te3。通过分析Bi2Te3薄膜的生长和退火工艺,探讨Bi/Te中Te的原子数分数对薄膜热电性能的影响。采用XRD和SEM对薄膜的结构、形貌和成分进行分析,并测量不同条件下的Seebeck系数。薄膜Seebeck系数均为负数,表明所制备样品是n型半导体薄膜,且最大值达到-76.81μV.K-1;电阻率ρ随Te的原子数分数增大而增大,其趋势先缓慢后迅速。Bi2Te3薄膜的热电性能良好,Te的原子数分数是60.52%时,功率因子最大,为1.765×10-4W.K-2.m-1。
Bi2Te3 films are the best thermoelectric materials at room temperature. Bi2Te3 films were prepared by magnetron sputtering on n-type silicon samples with a thin layer of SiO2. Bi2Te3 films were annealed to form Bi2Te3 films. By analyzing the growth and annealing process of Bi2Te3 thin films, the effect of atomic fraction of Te in Bi / Te on the thermoelectric properties of thin films was investigated. The structure, morphology and composition of the films were analyzed by XRD and SEM, and the Seebeck coefficients under different conditions were measured. The Seebeck coefficient of the film is negative, indicating that the prepared sample is an n-type semiconductor thin film with a maximum value of -76.81 μV.K-1. The resistivity ρ increases with the increase of the atomic number of Te, . The thermoelectric properties of Bi2Te3 thin films are good. The maximum power factor is 1.765 × 10-4W.K-2.m-1 when the atomic fraction of Te is 60.52%.