【摘 要】
：
-oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3×1016 He+/cm2 and 24 keV protons to a dose of 2×1016 H+/cm2. During He and H impla
【出 处】
：
IMP & HIRFL Annual Report
论文部分内容阅读
<100>-oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3×1016 He+/cm2 and 24 keV protons to a dose of 2×1016 H+/cm2. During He and H implantation,the samples were tilted by 7° from the sample normal to minimize channeling effects. Moreover,selected helium and hydrogen co-implanted Si wafers were irradiated with 94 MeV xenon. The implanted and irradiated wafers were annealed at a temperature of 673 K for 30 min. The damage region of the
<100> -oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3 × 10 16 He + / cm 2 and 24 keV protons to a dose of 2 × 10 16 H + / cm 2. During He and H implantation, the samples were tilted by 7 ° from the sample normal to minimize channeling effects. Moreover, the selected helium and hydrogen co-implanted Si wafers were irradiated with 94 MeV xenon. The implanted and irradiated wafers were annealed at a temperature of 673 K for 30 min. The damage region of the
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