提出一种改进的增强型GaN HEMT器件建模大信号模型。模型沟道电流方程和电荷方程均连续且高阶可导,栅电荷模型满足电荷守恒原则。提出的沟道电流模型可精确拟合实际器件正、反向区、截止区以及亚阈值区的直流特性。根据GaN HEMT器件特有的物理结构和电学特性,器件的自热效应、电流崩塌效应以及跨导频率分布效应在模型中进行了考虑。模型采用Verilog-A语言进行描述,并编译、链接入Agilent ADS工具。验证结果表明,模型仿真和测试数据在宽的偏压和频率范围内得到很好地吻合。 An improved large-signal model of enhanced GaN HEMT device modeling is proposed. The model channel current equation and the charge equation are both continuous and high order, and the gate charge model satisfies the principle of conservation of charge. The proposed channel current model accurately fits the DC characteristics of real devices in reverse, reverse, and subthreshold regions. According to the unique physical structure and electrical properties of GaN HEMT devices, self-heating effect, current collapse effect and transconductance frequency distribution effect of the device are considered in the model. The model is described in Verilog-A language and compiled and linked into the Agilent ADS tool. The verification results show that the model simulation and test data are in good agreement with the wide bias and frequency range.