日本NTT茨城电气通信研究所通过采用硅正型抗蚀剂(SNR)两层抗蚀剂技术形成了线宽为30～40nm的超微细图形。这种技术以SNR为上层抗蚀剂,碳膜作为下层抗蚀剂,并用微细束径的EB扫描装置进行曝光。显影后用氧反应离子腐蚀下层抗蚀剂。结果碳膜的腐蚀速度下降到为AZ抗蚀剂的二分之一,比SNR大20倍。耐腐蚀特性为:对氟系气体来说,碳膜为其他材料的2～4 Japan’s NTT Ibaraki Institute of Electrical Communication formed ultra-fine patterns with a linewidth of 30 to 40 nm by using a silicon positive resist (SNR) two-layer resist technique. This technique uses SNR as the upper resist, carbon film as the lower resist, and exposure with a microbeam EB scanner. After development, reactive oxygen ions etch the underlying resist. As a result, the corrosion rate of the carbon film was reduced to one-half that of the AZ resist, which was 20 times larger than the SNR. Corrosion resistance characteristics: For fluorine-based gas, the carbon film for other materials 2 to 4