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利用磁控反应溅射镀膜方法在低温(250℃)条件下制备了主要成分为B相亚稳态二氧化钒(VO2)的薄膜材料。电学性能测试表明:室温下该薄膜的方块电阻为50kΩ左右,电阻温度系数为-2.4%/K,可以作为非致冷红外微测热辐射热计的热敏材料。
The thin film material of B phase metastable vanadium dioxide (VO2) was prepared by magnetron reactive sputtering at low temperature (250 ℃). Electrical tests show that the film has a sheet resistance of about 50 kΩ and a temperature coefficient of resistance of -2.4% / K at room temperature, which can be used as a thermosensitive material for uncooled infrared microbolometer.