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采用磁控溅射法,在玻璃衬底上沉积了ZnS多晶薄膜,研究了衬底温度和Ar气流量对ZnS薄膜质量的影响.利用表面轮廓仪测量了薄膜的厚度,计算了薄膜的沉积速率.使用X射线衍射(XRD)分析了薄膜的微结构.通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了禁带宽度.结果表明:所有制备的ZnS薄膜均为闪锌矿结构,所有样品在(111)方向具有明显的择优取向,沉积速率随着衬底温度升高而降低,薄膜有较大的内应力,导致禁带宽度变窄.衬底温度为300℃时,薄膜的结晶质量最好.随着Ar气流量的增加,沉积速率增大,但薄膜的结构和光学性能都没有明显的变化.
The influence of substrate temperature and Ar gas flow rate on the quality of ZnS thin films was investigated by magnetron sputtering method deposited on a glass substrate.The thickness of the thin films was measured by surface profilometer and the deposition of thin films The microstructure of the films was analyzed by X-ray diffraction (XRD). The transmission spectra of the films were measured by UV-Vis spectrophotometer and the bandgap was calculated. The results show that all the prepared ZnS films are sphalerite (111) direction, the deposition rate decreases with increasing substrate temperature, and the film has a larger internal stress, resulting in a narrower band gap.When the substrate temperature is 300 ℃, The crystal quality of the film is the best.As the Ar gas flow rate increases, the deposition rate increases, but the structure and optical properties of the film have no significant changes.