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建立金属-绝缘体-半导体器件反型层子能带结构的势理论模型,并由此模型研究了金属-绝缘体-半导体器件红外探测器的工作机理及制作的关键.
A potential theoretical model of the energy band structure of the metal-insulator-semiconductor device inversion layer is established. Based on this model, the working mechanism of the metal-insulator-semiconductor device infrared detector and its fabrication are studied.