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采用SiH_4,N_2O和NH_3反应气体生长了Si_xO_yN_z膜,其特性取决于反应气体流量、射频功率、反应室压力和衬底温度。用折射率为1.71的Si_xO_yN_z做GaAs注Si~+包封退火膜,它比SiO_2或Si_3N_4有更高的电激活。该膜作为互连隔离介质已用于GaAs高速电压比较器。实验结果表明:Si_xO_yN_z是一种有希望的介质膜。
The Si_xO_yN_z films were grown by SiH_4, N_2O and NH_3 reaction gases. The properties of Si_xO_yN_z films depend on the reaction gas flow rate, RF power, reaction chamber pressure and substrate temperature. Si_xO_yN_z with a refractive index of 1.71 was used to fabricate a GaAs-implanted Si ~ + encapsulated annealed film with higher electrical activation than SiO_2 or Si_3N_4. This film has been used as a GaAs high speed voltage comparator as an interconnect isolation medium. Experimental results show that: Si_xO_yN_z is a promising dielectric film.