Rohm最新发表了他们首次采用沟槽式结构研制并大批量生产了碳化硅MOSFET。与传统平面式碳化硅MOSFET相比,同样芯片尺寸条件下,导通电阻降低了50%,极有可能也能大幅降低许多设备的功率损耗,如工业用转换器和电源,电源和太阳能电力系统的电力调制器,太阳能功率系统调制器。近些年,世界范围内越来越多的研究开始关注电力供应的解决方案,其中主要研究电源供应的转换和已产生电力的高效输运。碳化硅功率器件因为能 Rohm recently released their first trench structure development and mass production of silicon carbide MOSFET. With 50% lower on-resistance at the same die size than traditional planar silicon carbide MOSFETs, it is highly likely that the power losses of many devices, such as industrial converters and power supplies, power supplies and solar power systems Power Modulator, Solar Power System Modulator. In recent years, more and more researches all over the world have begun to pay attention to the solution of power supply, which mainly studies the conversion of power supply and the efficient transmission of generated power. Silicon carbide power devices because they can