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一般的饱和特性及τ_s 的测量本文的前一部分(参照图16、17及18)已经简要地讨论了晶体管饱和特性的问题。这里将介绍对式(23)的某些修正,以进一少探讨这个问题,并说明所得到的某些测量结果。
General Saturation Characteristics and Measurement of τ_s The problem of the transistor saturation characteristics has been briefly discussed in the previous section (see FIGS. 16, 17 and 18). Here we will introduce some corrections to equation (23) to explore this issue a little less and explain some of the measurements that result.