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In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste. Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy(SIMS) and sheet resistance measurements.
In this work we introducing recently developed silicon-paste-enabled p-type doping for silicon. Boron-doped silicon nanoparticles are synthesized by a plasma approach. They are then then in solvents to form silicon paste. Surface of silicon wafers. By annealing, boron atoms in silicon paste diffuse into silicon wafers. Chemical analysis is employed to obtain the concentration of boron in silicon nanoparticles. The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.