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Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low re- sistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electri- cal resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa,it is obtained that the lowest resistivity is 2.03 × 10-3Ω·cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.
Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low re- sistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electri- cal resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. it cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. the lowest resistivity is 2.03 × 10 -3 Ω · cm with a very high transmittance of 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.