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结合器件版图,通过对2 k SRAM存储单元和外围电路进行单粒子效应激光微束辐照,获得SRAM器件的单粒子翻转敏感区域,测定了不同敏感区域单粒子翻转的激光能量阈值和等效LET阈值,并对SRAM器件的单粒子闭锁敏感度进行测试。结果表明,存储单元中截止N管漏区、截止P管漏区、对应门控管漏区是单粒子翻转的敏感区域;实验中没有测到该器件发生单粒子闭锁现象,表明采用外延工艺以及源漏接触、版图布局调整等设计对器件抗单粒子闭锁加固是十分有效的。
Combined with the device layout, the single-particle inversion sensitive region of the SRAM device was obtained by single-particle laser beam irradiation of the 2 k SRAM cell and the peripheral circuit. The laser energy threshold of the single-particle inversion in different sensitive regions and the equivalent LET Threshold, and single-chip SRAM device latch-up sensitivity test. The results show that the dead zone of the N-tube and the drain of the P-tube in the memory cell are the sensitive areas where the single gate turns over. The single-cell latch-up phenomenon is not observed in the experiment, indicating that the epitaxial process and The design of source-drain contact, layout layout adjustment and so on is very effective for the device against single-particle blocking reinforcement.