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采用n型GaAs/AlGaAs量子阱材料,反应离子刻蚀RIE设备进行光栅、像元分割刻蚀,制备了320×256格式的长波量子阱红外探测器,像元中心距30μm,像元光敏面28μm×28μm,两像元间距2μm,达到了目前国际上1k×1k量子阱焦平面探测器像元间距研制水平。通过对320×256阵列上设计的陪管区进行光电性能测试,平均黑体探测率1.66×109 cm.Hz/W-1,响应率89.6 mA/W。
A n-type GaAs / AlGaAs quantum well material and a reactive ion etching RIE device were used for grating and pixel segmentation etching to prepare a 320 × 256 long wavelength quantum well infrared detector with a pixel center distance of 30 μm and a pixel photosensitive surface of 28 μm × 28μm, two pixel spacing 2μm, reached the current international development of 1k × 1k quantum well focal plane detector pixel spacing. Through the photoelectric performance test on the pendant area designed on the 320 × 256 array, the average detection rate of blackbody is 1.66 × 109 cm.Hz / W-1 and the response rate is 89.6 mA / W.