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提出一种宽带(250MHz~4.7GHz)无电感BiCMOS射频前端结构,包含低噪声跨导放大器(LNTA)、带电阻无源混频器和跨阻级。低噪声跨导放大器使用了噪声和线性度消除技术,例如输入交叉耦合结构、互补输入和电流复用技术。带电阻无源混频器采用退化电阻来提高线性度。仿真结果表明,当电源电压为3.3V时,总电流为9.38mA,噪声系数为9.8dB(SSB),电压转换增益为20dB,输入3阶交调为+11.8dBm。
A broadband (250MHz ~ 4.7GHz) inductorless BiCMOS RF front-end structure is proposed, including low-noise transconductance amplifier (LNTA), passive resistance mixer and transimpedance amplifier. Low-noise transconductance amplifiers use noise and linearity cancellation techniques such as input cross-coupling structures, complementary inputs and current-multiplexing techniques. Resistors with passive resistors to improve linearity. Simulation results show that when the supply voltage is 3.3V, the total current is 9.38mA, the noise figure is 9.8dB (SSB), the voltage conversion gain is 20dB, and the input third order intermodulation is + 11.8dBm.