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采用微波等离子体化学气相沉积设备在高掺杂硅衬底上沉积了一层金刚石薄膜,然后采用离子注入法在金刚石薄膜中注入不同剂量的Ce3+,从而制备出了Ce3+掺杂的金刚石薄膜。研究了其电致发光特性,得到了发光主峰位于蓝区(476 nm和435 nm处)的光发射。实验中发现随着Ce3+注入剂量的增加,电致发光强度也随之增加。
A diamond thin film was deposited on the highly doped silicon substrate by microwave plasma chemical vapor deposition equipment. Different amounts of Ce3 + ions were implanted into the diamond thin films by ion implantation to prepare Ce3 + -doped diamond films. The electroluminescence properties were studied, and the emission of the main peak located in the blue region (476 nm and 435 nm) was obtained. The experiment found that with the Ce3 + dose increased, the electroluminescence intensity also increased.