Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser (VCSEL) in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435°C selective oxidation of Al0.98 Ga0.02 As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435°C approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.