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三洋电气公司开发出一种实用的基波横模大功率AlGaAs半导体激光器,光输出功率100mW,波长在830—870nm之间。市场早已有50mW大功率半导体激光器出售,但要进一步提高光输出功率,尚有许多困难。三洋公司采用最佳结构等措施,加以改进,将光输出功率提高到100mW,且可以产生830—870nm之间任何波长的激光束。首先,三洋公司在激光器发射激光束的端面附近设立了电流阻挡层,以降低端面的光吸收;将谐振腔的长度由常规的250μm增加到
Sanyo Electric Company has developed a practical fundamental wave transverse mode high-power AlGaAs semiconductor laser, the optical output power of 100mW, the wavelength between 830-870nm. The market already has 50mW high-power semiconductor lasers sold, but there are many difficulties to further improve the optical output power. Sanyo company using the best structure and other measures to be improved, the optical output power increased to 100mW, and can produce any wavelength between 830-870nm laser beam. First, Sanyo established a current blocking layer near the end face of the laser emitting laser beam to reduce the light absorption of the end face. The length of the resonant cavity was increased from the conventional 250 μm to