利用射频磁控反应溅射法，以Ar、CH4为原料气体，在较宽的工艺参数范围内制备出了GexC1－x薄膜，研究了极板间距对沉积的影响。结果表明，随极板间距的减小，沉积速率增大，薄膜的均匀性变差，薄膜中Ge／C的原子比增加. By using RF magnetron reactive sputtering method, the GexC1-x thin films were prepared in a wide range of process parameters with Ar and CH4 as raw materials, and the influence of plate spacing on the deposition was investigated. The results show that with the decrease of the plate spacing, the deposition rate increases and the uniformity of the film becomes worse. The atomic ratio of Ge / C in the film increases.