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在大功率晶体管生产中,一般要在硅片背面进行一次或两次化学镀镍.为了保护好硅片正面,镀镍前需要在硅片正面涂上一层黑胶作保护层,而镀镍后再把这层黑胶去除掉,且要求去除得很干净.根据化学原理,一般采用甲苯超声法去黑胶,通常工艺规定为:用干净甲苯(亦可用回收的较净的甲苯)多次(一般约需4～5次)超声去黑胶,直至硅片正面的黑胶全部溶掉,再用干净的甲苯超声2遍,接着用丙酮超声2遍,然后在红外灯下烘干就可交检验了.
In the production of high-power transistors, the wafers are typically subjected to one or two times of electroless nickel plating on the back of the wafers. In order to protect the front side of the wafers, a layer of black glue needs to be coated on the front side of the wafers for protection before nickel plating, Then remove the layer of vinyl and require removal is very clean.According to chemical principles, the general use of toluene ultrasound to the vinyl, the general process is: with clean toluene (also available recycled net toluene) several times (Usually about 4 to 5 times) ultrasound to the vinyl until the silicon front of the vinyl completely dissolved, and then clean toluene ultrasonic 2 times, followed by ultrasound with acetone 2 times, and then dried under the infrared light can be Checked.