论文部分内容阅读
,Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-t
【机 构】
：
Science and Technology on ASIC Lab., Hebei Semiconductor Research Institute, Shijiazhuang 050051, Ch
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2012年9期
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