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The influence of a deep-level-defect(DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN(p++-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping(VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p++-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p++-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10-4?·cm2 is achieved.
The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni / Au contact to p-GaN is investigated. contact layer with DLD band can effectively improve the performance of Ni / Au ohmic contact to p-GaN. The temperature-dependent I-V measurement shows that variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the The thickness and Mg / Ga flow ratio of p ++ - GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ - GaN contact layer is 25 nm thick and the Mg / Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97 × 10 -4 Ω · cm2 is achieved.