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为了降低液硅渗透法制备C/C-SiC复合材料中残留Si的含量,采用浆料浸渗结合液硅渗透工艺制备B12(C,Si,B)3改性C/C-SiC复合材料。通过分析不同比例B4C-Si体系在不同温度的反应产物,确定了B12(C,Si,B)3的生成条件。结果表明:B4C和Si在1300℃开始反应,生成少量B12(C,Si,B)3和SiC,且B12(C,Si,B)3的生成量随反应温度的升高而增加;当B4C和Si的摩尔比为3∶1、反应温度为1500℃时,产物为B12(C,Si,B)3和SiC;液硅渗透法制备的C/C-SiC复合材料相组成为非晶态C、β-SiC和B12(C,Si,B)3,未见残留Si。
In order to reduce the content of residual Si in C / C-SiC composites prepared by liquid-liquid infiltration method, B12 (C, Si, B) 3 modified C / C-SiC composites were prepared by slurry infiltration combined with liquid- The formation conditions of B12 (C, Si, B) 3 were determined by analyzing the reaction products of different proportions of B4C-Si at different temperatures. The results show that the formation of small amount of B12 (C, Si, B) 3 and SiC and the formation of B12 (C, Si, B) 3 increase with increasing reaction temperature when B4C and Si begin to react at 1300 ℃. And Si molar ratio of 3: 1, the reaction temperature is 1500 ℃, the product is B12 (C, Si, B) 3 and SiC; liquid-silicon infiltration prepared C / C-SiC composites phase composition of amorphous C, β-SiC and B12 (C, Si, B) 3, no residual Si.