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Ⅰ 线光致抗蚀剂可以同时被电子束和光学曝光系统曝光 ,在 5 0KV加速电压下 ,其曝光剂量为 5 0 1 0 0 μC cm2 ,曝光后在 0 .7%NaOH溶液内显影 1min。其灵敏度比PMMA快 5倍 ,分辨率为 0 .5 μm。采用两种方法制备GaAsPHEMT ,首先 ,用I线光致抗蚀剂 ,源、漏及栅的全部都采用电子束曝光 ,制备了 0 .5 μm栅长的GaAsPHEMT。将源、漏及栅分割成两部分 ,其中的精细部分由电子束曝光 ,其余部分由光学曝光系统曝光 ,用这种方法制备了 0 .2 5 μm栅长的GaAsPHEMT。
I line photoresist can be electron beam and optical exposure system exposure at the same time, at an accelerating voltage of 50KV, the exposure dose of 5 0 1 0 0 μC cm2, after exposure in 0.7% NaOH solution for 1min. Its sensitivity is 5 times faster than PMMA with a resolution of 0.5 μm. GaAsPHEMT was prepared by two methods. First, GaAsPHEMT with a gate length of 0.5 μm was prepared by electron beam lithography with all of the I-line photoresist, source, drain and gate. The source, drain and gate are divided into two parts, the fine part of which is exposed by the electron beam and the rest is exposed by the optical exposure system. In this way, 0.52μm gate length GaAsPHEMT is prepared.